INDIUM NITRIDE

-100 mesh with 99.999% purity; wurtzite system, a=0.353 nm, c=0.570 nm; can be prepared by reacting In2O3 with ammonia at high temp; has semiconductor and electroluminescence properties [KIR81] [CIC73] [CER91]

In manufacture of optoelectronic devices such as light-emitting diodes, laser diodes, and solar cells.